| 摘要 |
PROBLEM TO BE SOLVED: To efficiently clean an oxidization system which can selectively oxidize in a low-pressure atmosphere the silicon layer of an object having a silicon layer and a tungsten layer. SOLUTION: In order to clean a metal adhering to the internal surface of the reaction tube 11 of the oxidization system which selectively oxidizes the side wall of the silicon layer of an electrode having a laminated structure of the silicon layer and tungsten layer and a dummy wafer, tungsten and a tungsten compound adhering to the internal surface of the reaction tube 11, a wafer boat 31, and the dummy wafer are removed by supplying a halogen-based gas, such as HCl, etc., and oxygen into the reaction tube 11 through a cleaning gas introducing port 43.
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