| 摘要 |
PROBLEM TO BE SOLVED: To provide a stable wiring structure having small contact areas for wiring formed in a self-aligning way with a very narrow line width and a method of manufacturing the structure. SOLUTION: A wiring layer 14 is formed in a self-aligning way on the side wall of an insulating layer 12 and extended on a substrate 11. An island area 13 composed of a silicon oxide film, etc., is formed adjacently to the wiring layer 14 and a conductive layer 16 composed of doped polysilicon, etc., is formed around the area 13. Another conductive layer 15 is embedded in the area between the island area 13 and insulating layer 12. In this area, the conductive layer 16 is integrated with the wiring layer 14. An interlayer insulating film 17 composed of a BPSG film, etc., is formed on the whole surface of the substrate 11, and a contact hole C3 is formed in an area including the area above the embedded conductive layer 16. In addition, an upper wiring layer 18 which is brought into contact with the conductive layer 16 through the contact hole C3 is formed.
|
