发明名称 DRIVE METHOD AND DRIVE CIRCUIT FOR VOLTAGE DRIVE ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a drive circuit for a voltage drive element that can prevent increase in a surge voltage and a noise independently of a change in a main current while ensuring an advantage of a high switching speed of a voltage drive element such as a MOSFET. SOLUTION: A control signal is applied from a 2nd switch SW2 to a gate of the MOSFET 10 via a 2nd resistor means 5. A 1st resistor means 4 connected to a 1st switch SW1 is placed in parallel with the 2nd resistor means 4. The 1st switch is closed based on the switching of the 2nd switch, after a voltage detection section 6 detects that a terminal voltage of the MOSFET reaches a prescribed value, the 1st switch is open after a delay time set by a delay circuit 8 in response to the main current detected by a current detection section 7. Thus, just after the switching to turn-off of the MOSFET, a changing speed of the gate voltage is kept high at a lower resistance by both the resistor means and then the changing speed of the gate voltage is relaxed in proper timing depending on the terminal voltage and the main current.
申请公布号 JP2001274665(A) 申请公布日期 2001.10.05
申请号 JP20000086714 申请日期 2000.03.27
申请人 NISSAN MOTOR CO LTD 发明人 IWASHIMA MAKOTO
分类号 H03K17/16;(IPC1-7):H03K17/16 主分类号 H03K17/16
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