| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for protecting against static electricity which enables higher speed operation. SOLUTION: This semiconductor device contains a P-type well 11 containing a P-type impurity diffusion layer 90 and an N-type impurity diffusion layer 20, and an N-type well 13 which is formed in the P-type well 11 and contains a P-type impurity diffusion layer 30 and an N-type impurity diffusion layer 40. A first bipolar transistor 210 is constituted of the P-type impurity diffusion layer 30, the N-type well 13 and the P-type well 11. A second bipolar transistor 220 is constituted of the N-type impurity diffusion layer 20, the P-type well 11 and an N-type well 13. A Zener diode 230 is constituted of an N-type impurity diffusion layer 50 and a P-type impurity diffusion layer 60. A P-type impurity diffusion layer 70 is formed on the upper surface of the N-type impurity diffusion layer 50.
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