| 摘要 |
PURPOSE: An ion implantation system is provided to measure accurately a degree of vacuum of a load lock chamber by installing a high vacuum gauge on a nitrogen supply line. CONSTITUTION: The first vacuum pump(18) is connected with a process chamber(10) by the first vacuum valve(14). The first and the second load lock chambers(24,34) are installed to control a degree of vacuum. The first and the second load lock chambers(24,34) are connected with the process chamber(10) by the first large valve(20) and the second large valve(30). The first and the second nitrogen supply sources(42,46) are connected with the first and the second load lock chambers(24,34). The first nitrogen supply source(42) is connected with the first load lock chamber(24) by a valve(40) installed on the first nitrogen supply line(28). The second nitrogen supply source(46) is connected with the second load lock chamber(34) by a valve(44) installed on the second nitrogen supply line(38). The first and the second high vacuum gauges(26,36) are installed on the first and the second nitrogen supply lines(28,38) in order to measure the degree of vacuum of the first and the second load lock chambers(24,34).
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