| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device of high level integration wherein high reliability is maintained and high speed driving is realized, by arranging a protective element below an impurity region of an integrated circuit element and protecting the buried insulating layer in a semiconductor integrated circuit device of SOI structure. SOLUTION: A trench 312a which penetrates the impurity region 301a of the circuit element formed on a semiconductor layer 306 of a SOI substrate 314 and reaches a conductor layer 311 formed on a semiconductor substrate 304 is formed. In the trench 312a, a conductor 310a for electrically connecting the impurity region 301a of the circuit element with the conductor layer 311 is formed. By the above constitution, a surge voltage applied from an external connecting terminal 101 can be quickly transferred to the semiconductor substrate 304, so that breakdown of the buried insulating layer is prevented.
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