| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device wherein a viahole and a wiring trench can be formed without generating film thinning of an interlayer insulating film positioned below a resist pattern, when film thinning of a resist pattern which is used as a mask is generated in the applying of organic insulating films to a dual damascene process. SOLUTION: In this manufacturing method of a semiconductor device, a laminated film is constituted by laminating a first organic based insulating film 3, a first etching stop film 4 and a second organic based insulating film 5 in this order. When an aperture which is stretched from the insulating film 5 to the insulating film 3 is formed on the laminated film by etching using resist patterns 7, 9, a second etching stop film 6 which can protect the insulating film 5 from etching during formation of the aperture is formed between the resist patterns 7, 9 and the insulating film 5.
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