A MULTI-STAGE ARSENIC DOPING PROCESS TO ACHIEVE LOW RESISTIVITY IN SILICON CRYSTAL GROWN BY CZOCHRALSKI METHOD
摘要
A method of lowering the resistivity of resultant siliconcrystal from a Czochralski crystal growing process by addingarsenic dopant to the melt in multiple stages.
申请公布号
WO0186036(A2)
申请公布日期
2001.11.15
申请号
WO2001US13983
申请日期
2001.05.01
申请人
MEMC ELECTRONIC MATERIALS, INC.
发明人
BANAN, MOHSEN;KULKARNI, MILIND;WITMER, CHARLES, II
