HIGH SPEED DATA INPUT PATH IN SEMICONDUCTOR MEMORY DEVICE,申请号KR20000029700-传众专利搜索

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发明名称	HIGH SPEED DATA INPUT PATH IN SEMICONDUCTOR MEMORY DEVICE
摘要
申请公布号	KR20010108786(A)	申请公布日期	2001.12.08
申请号	KR20000029700	申请日期	2000.05.31
申请人	HYNIX SEMICONDUCTOR INC.	发明人	KWON, GI CHANG
分类号	(IPC1-7):G11C11/409	主分类号	(IPC1-7):G11C11/409
代理机构		代理人
主权项
地址

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