发明名称 SEMICONDUCTOR LASER
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor facet laser of a current injection type wherein oscillation threshold value is low and consumption power is small. SOLUTION: A stripe-shaped electrode which revolves while being in contact with an inner side surface of a polygonal pillar structure is formed on the upper surface of the polygonal pillar structure.
申请公布号 JP2001358401(A) 申请公布日期 2001.12.26
申请号 JP20000176448 申请日期 2000.06.13
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 AKASAKA TETSUYA;ANDO SEIGO;YAMAUCHI YOSHIHARU;KOBAYASHI NAOKI
分类号 H01S5/10;H01S5/042;H01S5/323;H01S5/343;(IPC1-7):H01S5/10 主分类号 H01S5/10
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