发明名称 |
SEMICONDUCTOR LASER |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor facet laser of a current injection type wherein oscillation threshold value is low and consumption power is small. SOLUTION: A stripe-shaped electrode which revolves while being in contact with an inner side surface of a polygonal pillar structure is formed on the upper surface of the polygonal pillar structure.
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申请公布号 |
JP2001358401(A) |
申请公布日期 |
2001.12.26 |
申请号 |
JP20000176448 |
申请日期 |
2000.06.13 |
申请人 |
NIPPON TELEGR & TELEPH CORP <NTT> |
发明人 |
AKASAKA TETSUYA;ANDO SEIGO;YAMAUCHI YOSHIHARU;KOBAYASHI NAOKI |
分类号 |
H01S5/10;H01S5/042;H01S5/323;H01S5/343;(IPC1-7):H01S5/10 |
主分类号 |
H01S5/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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