SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To restrain generation of current leakage which is caused by a step generated in a boundary part in the case that a contact hole for connecting a source/drain region and a wiring is formed over the boundary part between the source/drain region and an STI structure. SOLUTION: The contact hole which is formed in an interlayer insulating film 36 covering a MOS type transistor and a trench isolation structure 41 extends to a part of the source/drain region 34 and a part of the trench isolation structure 41 of the MOS type transistor, and an electrode plug 49 for contact which is in contact with the source/drain region 34 is formed in an aperture part of the contact hole. An insulating side wall spacer 50 is formed on an side surface of the step formed between an upper surface of an element region and an upper surface of the trench isolation structure 41, and blocks a current leakage path between the source/drain region 34 and the electrode plug 49.