DUAL-GATE SEMICONDUCTOR DEVICE HAVING BARRIER LAYER CONTAINING NITROGEN AND OXYGEN AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a dual-gate semiconductor device capable of solving a problem associated with boron diffusion, and a method of manufacturing the same. SOLUTION: In a form of embodiment, the dual-gate semiconductor device contains a low-voltage region where a first gate dielectric are formed thereon and a diffusion barrier layer containing nitrogen and oxygen is formed on the first gate dielectric, and a high-voltage region where a second gate dielectric having a thickness thicker than that of the first gate dielectric is formed thereon and the diffusion barrier layer does not exist.