| 摘要 |
PROBLEM TO BE SOLVED: To realize low resistance of common electrode which has a big influence on driving voltage and ink extraction volume, in an electrostatic ink jet head. SOLUTION: A silicon support substrate 1 with a gap formed by dry etching process is formed (Fig.1 (A)), an insulation film 2 composed of thermally oxidized film is formed on its surface, and unnecessary portion of the oxidized film 2 is removed by means of wet etching (Fig.1 (B)). As a next step, an electrode material to become a counter electrode 3 is formed as film by spattering process, and patterning of the counter electrode 3 is done by photolithography/ etching processes, then, an insulation film 4 is formed by CVD process and its patterning is done by photolithography/etching processes (Fig.1 (C)). Then, a diaphragm 5 and a bulkhead forming substrate 6 are adhered to the support substrate 1 which comprises the insulation film 2, the counter electrode 3 and the insulation film 4 by direct adhesion (Fig.1 (D)).
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