| 摘要 |
PROBLEM TO BE SOLVED: To provide a master slice system semiconductor integrated circuit device in which electrostatic protection capability and output drive capability can be optimized without lowering the efficiency of pads and elements. SOLUTION: A plurality of kinds of transistor bulks having different a gate length and gate width, and different interval between a gate electrode and the contact of a source electrode or a drain electrode are arranged freely in an I/O buffer region and electrostatic protection capability and output drive capability are optimized by connecting transistor bulks, corresponding in number to requested functions or performances, arbitrarily through aluminum interconnect. When an I/O buffer is arranged as mentioned above, a master slice system semiconductor integrated circuit device in which electrostatic protection capability and output drive capability can be optimized without lowering the efficiency of pads and elements can be provided.
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