| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon oxide film electret, which is improved in moisture resistance characteristics and is immune to uses as an element for reflow, and to provide an electret capacitor microphone. SOLUTION: For this silicon oxide film electret, a silicon oxide film is formed on the surface of a base material 2, treated thermally at 200 to 400 deg.C in the atmosphere of dry air, pure oxygen gas or oxygen containing Ar gas, without releasing the atmosphere from the filming atmosphere, and is charged later.
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