| 摘要 |
PROBLEM TO BE SOLVED: To provide an optically triggered lateral thyristor in which photosensitivity and dV/dt resistance can be enhanced simultaneously. SOLUTION: The optically triggered lateral thyristor comprises a first conductivity semiconductor substrate 1, a thyristor having a second conductivity anode region formed on the major surface of the semiconductor substrate 1, a second conductivity anode region and a first conductivity cathode region formed in the gate region, and a resistor R1 connecting the gate region and the cathode region wherein a circuit 9 having a resistance increasing upon receiving light is connected in parallel with the resistor R1 between the gate region and the cathode region.
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