| 发明名称 |
DOUBLE-ETCH NANOWIRE PROCESS |
| 摘要 |
In an aspect of this disclosure, a method is provided comprising the steps of: (a) providing a silicon-containing substrate, (b) depositing a first metal on the substrate, (c) etching the substrate produced by step (b) using a first etch, and (d) etching the substrate produced by step (c) using a second etch, wherein the second etch is more aggressive towards the deposited metal than the first etch, wherein the result of step (d) comprises silicon nanowires. The method may further comprise, for example, steps (b1) subjecting the first metal to a treatment which causes it to agglomerate and (b2) depositing a second metal. |
| 申请公布号 |
US2016319441(A1) |
申请公布日期 |
2016.11.03 |
| 申请号 |
US201615206938 |
申请日期 |
2016.07.11 |
| 申请人 |
Advanced Silicon Group, Inc. |
发明人 |
Yim Joanne;Miller Jeffrey B.;Jura Michael;Black Marcie R.;Forziati Joanne;Murphy Brian P.;Standley Adam |
| 分类号 |
C23F1/30;H01M10/0525;H01M4/134;H01L35/10;H01M4/04 |
主分类号 |
C23F1/30 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising the steps of: (a) providing a silicon-containing substrate, (b) depositing a first metal on the substrate, (c) etching the substrate produced by step (b) using a first etch, and (d) etching the substrate produced by step (c) using a second etch, wherein the second etch is more aggressive towards the deposited metal than the first etch, wherein the result of step (c) comprises silicon nanowires and the result of the step (d) comprises silicon nanowires that are longer than after step (c). |
| 地址 |
Lincoln MA US |
