METHOD FOR FABRICATING SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor memory device is provided to increase a surface area of a storage electrode and guarantee large capacitance by forming hemispherical grain(HSG) silicon on the storage electrode. CONSTITUTION: A lower insulation layer(2) having a contact hole is formed on a semiconductor substrate(1). A polycrystalline silicon layer for the storage electrode is formed on the resultant structure. A silicon-containing metal layer is formed on the polycrystalline silicon layer for the storage electrode wherein silicon is formed on an interface between the polycrystalline silicon layer for the storage electrode and the metal layer. The metal layer and the polycrystalline silicon layer are sequentially and selectively etched to form a metal layer pattern and a polycrystalline silicon layer pattern(14) for the storage electrode. The metal layer pattern is etched to make the HSG silicon left on the polycrystalline silicon layer pattern for the storage electrode so that the surface area of the storage electrode is expanded.