| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method including a channel ion implantation process for regulating a threshold voltage of a transistor in a manufacturing process of a semiconductor memory element comprising a self-aligned contact plug self-aligned by a gate electrode. SOLUTION: In a semiconductor substrate having a limited active region where a first portion for forming a gate electrode and a second portion for forming a bit line contact and a third portion for forming a storage node contact of a capacitor are included, a mask pattern which covers a top surface of the semiconductor substrate so that only the first and the second portions are exposed is used. In addition, the active region including the first portion, the second portion, and the third portion is limited to the semiconductor substrate. A channel ion implantation region is formed by ion-implanting a dopant of a first conductivity type in the active region of the semiconductor substrate using the mask pattern.
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