| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory device which can sense dual slope and includes plural sense amplifiers. SOLUTION: The memory device comprises plural sense amplifiers arranged scatteredly in an integrated circuit chip, and each sense amplifier has a power node for receiving current. Conductors connect mutually power nodes of many sense amplifiers. A power source conductor having low impedance is extended to each sense amplifier, and a local drive transistor is provided for each sense amplifier. A timer unit generates an output signal controlling the local drive transistor. A first component in the timer unit varies an output from a first logic level to a second logic level at a first rate, on the other hand, a second component in the timer unit varies an output at a second rate. Then, the second rate is larger than the first rate.
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