发明名称 METHOD FOR GROWING CARBON NANO TUBES SELECTIVELY IN HORIZONTAL DIRECTION FOR APPLICATION TO ELECTRON, SPIN, AND PHOTO ELEMENTS
摘要 PURPOSE: Provided is a method for growing carbon nano tubes selectively and directly in the desired position in the horizontal direction for the application to integrated electron, spin, and photo elements. CONSTITUTION: The method comprises the steps of: forming an insulating film on a substrate at a temperature of 1100deg.C in an electric furnace by an oxidation process or a CVD(chemical vapor deposition) method; forming fine patterns of a catalyst metal layer containing a contact electrode pad on the insulating film by using a catalyst metal such as Ni, Ni/Ti(or Nb), Co, Co/Ti(or Nb), Fe, Fe/Ti(or Nb), and etc.; growing the carbon nano tubes(106) directly among the catalyst patterns under C2H2(or C2H4)/N2(H2, NH3) gas and the gas pressure of 10-500torr for 10-3000sec by a thermal chemical vapor deposition or a plasma process.
申请公布号 KR20020015795(A) 申请公布日期 2002.03.02
申请号 KR20000048907 申请日期 2000.08.23
申请人 KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 JANG, YUN TAEK;JU, BYEONG GWON;LEE, YUN HUI
分类号 C01B31/02;C23C16/04;C23C16/26;C30B25/00;C30B25/02;D01F9/12;H01L51/30 主分类号 C01B31/02
代理机构 代理人
主权项
地址