| 摘要 |
PURPOSE: A semiconductor manufacturing device and a method thereof are provided to improve the mobility in the peripheral circuit region, and to perform the high speed driving by making transistor characteristics uniform at high level. CONSTITUTION: An a-Si film(2) is patterned into the linear shape(ribbon shape) or island shape on a glass substrate(1). The upper surface of the a-Si film or the lower surface of the glass substrate is irradiated and scanned with an energy beam in the direction indicated by an arrow. The energy beam is output continuously along the time axis from a CW laser(3), and the a-Si film is crystallized by irradiating and scanning the energy beam. The transistor characteristics of a TFT(Thin Film Transistor) are made uniform at high level, and the mobility is high particularly in a peripheral circuit area for high speed driving. |
