| 摘要 |
PURPOSE: To dramatically raise the amount of information on signals which are detected by the same various plasma process monitors as ones being hitherto used while these monitors are used, and to realize a control of a high-accuracy plasma treatment of a wafer. CONSTITUTION: Such control parameters as a power to generate a plasma radiation, a pressure of the plasma treatment, the flow rate of gas and a high-frequency bias power to a wafer are made to vary for a very short time, in comparison with the whole plasma treating time in the range that an effect is not exerted on the result of a plasma treatment of the wafer. The non-steady-state properties of the state of a plasma that occurs at the time of the variation is monitored. Even though the same process monitors as conventional ones are used, information on signals which are detected by the monitors to a time base results in being increased and the amount of the information on the signals including obtained data is dramatically increased. A control of a plasma treatment of the wafer is exercised using the signals obtained by this monitoring method, whereby a fine etching processing of the wafer, a high-frequency film-forming processing of the wafer, and a surface treatment of the wafer and the like are enabled.
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