| 摘要 |
In a semiconductor device and a method of manufacturing the same, two floating gate electrodes are independently controlled with one control gate electrode. In the semiconductor device, the first floating gate electrode is formed on a channel region with a first gate insulating film therebetween, and the control gate electrode is formed on the first floating gate electrode with a first interlayer insulating film therebetween. The second floating gate electrode exists on the control gate electrode and has a portion extended above a semiconductor substrate and overlapping with a second impurity diffusion layer. A first impurity diffusion layer overlaps with an end of the first floating gate electrode. Thereby, writing, erasing and reading are effected on the two, i.e., first and second floating gate electrodes with one control gate electrode while maintaining the substantially same memory cell area as the prior art.
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