发明名称 |
Method for manufacturing semiconductor devices |
摘要 |
A method for manufacturing semiconductor devices comprising a step in which an adhesive layer used to bond dies cut out of a wafer to another member is formed on the front surface of the wafer that has desired integrated circuits, and a step in which a thin film conversion treatment is performed from the back surface side on the wafer in which recessed grooves used for separation of dies have been formed from the front surface side and on which the adhesive layer has been formed, until the recessed grooves are exposed.
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申请公布号 |
US2002037631(A1) |
申请公布日期 |
2002.03.28 |
申请号 |
US20010961222 |
申请日期 |
2001.09.21 |
申请人 |
KABUSHIKI KAISHA SHINKAWA |
发明人 |
MIMATA TSUTOMU |
分类号 |
H01L21/301;H01L21/58;H01L21/68;H01L21/78;H01L21/98;(IPC1-7):H01L21/301;H01L21/46 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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