| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMOS active pixel which makes the sensitivity improved, while minimizing reduction in a light-receiving area. SOLUTION: There are provided a floating diffusion layer 43, a photodiode 31, a reset part 33, and an output part 34. The floating diffusion layer 43 is a doped first impurity type for receiving signal charge. The photodiode 31 transfers the signal charge generated by the energy, which is photodetected to the floating diffusion layer 43. The photodiode 31 comprises a second impurity type upper-part diode impurity layer 51 and a first impurity type lower-part diode impurity layer 41. The lower-part diode impurity layer 41 is formed to be brought into contact with the lower part of the upper-part diode impurity layer 51. The reset part 33 responds to a prescribed control signal RESET and controls a voltage level of the floating diffusion layer 43 to a prescribed reset voltage level. The electron potential energy of the lower-part diode impurity layer 41 in an initial state is higher than that of the floating diffusion layer 43.
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