PHOTODETECTION ELEMENT ARRAY

摘要

PROBLEM TO BE SOLVED: To provide a photodetection element array which can prevent the characteristics of the photodetecting elements from deteriorating due to crosstalks and stray lights. SOLUTION: A pin photodiode is formed by laminating an n-InP layer 22, an I-InGaAs layer 24, and an n-InP layer 26 on an n-InP substrate 20 and forming p-type diffusion areas 28 by diffusing Zn in the n-InP layer 26. On this structure, an insulating film 30 is formed to a thickness satisfying nonreflection conditions. On this insulating film 30, light-shielding layers 32 are provided to cover the parts between the photodetecting elements.