| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem of conventional high speed switching transistors to which Pt is introduced from the rear plane of a substrate due to the fact that Pt is easily gettered by the N+ type region in a semiconductor element region and the problem of low productivity compared with that of a general transistor, due to the Pt introduction process and a pretreatment for the introduction from the rear plane. SOLUTION: In this invention, Pt as well as an impurity for forming N+ regions in the semiconductor element region are diffused simultaneously from the front surface of the substrate, and by controlling subsequent baking conditions, Pt gettered by N+ regions can be emitted. Hereby, the process of diffusing Pt from the rear plane can be eliminated, which can cut down nearly one fourth of a manufacturing process of the semiconductor device, and additionally, since the emitted quantity of Pt into the substrate can be controlled by the baking conditions, it can considerably contribute to the productivity improvement.
|
