| 摘要 |
PROBLEM TO BE SOLVED: To prevent electrical characteristics of a ferrodielectric capacitor from degrading by a semiconductor process after the ferrodielectric capacitor is formed in a semiconductor device having the ferrodielectric capacitor. SOLUTION: An IrO2 film is deposited as the upper electrode of the ferrodielectric capacitor on a ferrodielectric film containing Pb such that an amorphous region is formed along the boundary of the ferrodielectric film and is crystallized through heat treatment in an oxidizing atmosphere. Thereby, a structure that includes an aggregate of fine IrO2 crystals of 50 nm or smaller in average particle size and segregates Pb at the grain boundary, in response to the amorphous region, is formed in the upper electrode.
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