发明名称 |
Method for self-aligned vertical double-gate MOSFET |
摘要 |
A method of forming a self-aligned vertical double-gate metal oxide semiconductor field effect transistor (MOSFET) device is provided that includes processing steps that are CMOS compatible. The method include the steps of growing an oxide layer on a surface of a silicon-on-insulator (SOI) substrate, said SOI substrate having a buried oxide region located between a top Si-containing layer and a bottom Si-containing layer, wherein said top and bottom Si-containing layers are of the same conductivity-type; patterning and etching gate openings in said oxide layer, said top Si-containing layer and said buried oxide region stopping on said bottom Si-containing layer of said SOI substrate; forming a gate dielectric on exposed vertical sidewalls of said gate openings and filling said gate openings with silicon; removing oxide on horizontal surfaces which interface with said Si-containing bottom layer; recrystallizing silicon interfaced to said gate dielectric and filling said gate openings with expitaxial silicon; forming a mask on said oxide layer so as cover one of the silicon filled gate openings, while leaving an adjacent silicon filled gate opening exposed; selectively implanting dopants of said first conductivity-type into said exposed silicon filled gate opening and activating the same, wherein said dopants are implanted at an ion dosage of about 1E15 cm-2 or greater; selectively etching the exposed oxide layer and the underlying top Si-containing layer of said SOI substrate stopping on said buried oxide layer; removing said mask and implanting a graded-channel dopant profile in said previously covered silicon filled gate opening; etching any remaining oxide layer and forming spacers about said silicon filled gate openings; and saliciding any exposed silicon surfaces.
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申请公布号 |
US6372559(B1) |
申请公布日期 |
2002.04.16 |
申请号 |
US20000709073 |
申请日期 |
2000.11.09 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CROWDER SCOTT;HARGROVE MICHAEL J.;KU SUK HOON;LOGAN L. RONALD |
分类号 |
H01L21/8238;H01L21/84;H01L27/12;H01L29/423;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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