| 摘要 |
PROBLEM TO BE SOLVED: To obtain a highly reliable detector without decrease in mechanical strength, such as cracks or warpages under low-temperature and high-temperature environments, the decrease in sensor characteristics due to the decrease in resistance caused by the crystallization of selenium, and further discharge breakdown or the like due to the application of a high voltage, without having to use materials, such as resin and adhesives, or protection layers. SOLUTION: In the electric field application type X-ray detector, where an X-ray latent image is formed by directly applying an electric field to an X-ray light sensitive layer, carriers that are generated by applying the electric field and X rays are allowed to run in a sensor, and obtained electric charges are subjected to image processing; an X-ray photoconductive layer 2 is provided on a substrate 1, where an electric charge collection electrode is formed on a glass plate, and a protection layer 4 containing a thermosetting silicide that is generated by performing the hydrolysis of a silane compound is provided on the X-ray photoconductive layer 2 and an upper electrode 3; thus easily obtaining a high electrical resistance which covers with almost no difference in the thermal coefficient of expansion with a glass substrate and having without the problems of warpages and cracks due to environmental changes, and hence very much improving durability to mechanical, physical, and electrical stresses required for long operation to a field requiring a flat surface and a large area.
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