发明名称 |
METHOD OF PLANARIZING SUBSTRATE, SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To easily and reliably planarize steps formed on a semiconductor substrate without using the COM method, and obtain a superior flatness over a wide area of the semiconductor substrate surface without bringing about the process increase or cost up, thereby realizing a high speed operation with a little wiring delay. SOLUTION: Before heating to cross-link a polymer film 17, a shower head 31 of a press member having a high-flatness surface presses the surface of the polymer film 17 to planarize it, while a solvent is supplied to the surface of the polymer film 17.
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申请公布号 |
JP2002124513(A) |
申请公布日期 |
2002.04.26 |
申请号 |
JP20000314129 |
申请日期 |
2000.10.13 |
申请人 |
FUJITSU LTD |
发明人 |
FUKUYAMA SHUNICHI;NAKADA YOSHIHIRO;OWADA TAMOTSU;SUZUKI KATSUMI;SUGIURA IWAO |
分类号 |
H01L21/3205;H01L21/312;H01L21/768;(IPC1-7):H01L21/312;H01L21/320 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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