| 摘要 |
<p>PURPOSE: Provided are a photoresist polymer capable of being used under light source of VUV(157 nm) and EUV(13 nm), as well as ArF(193 nm), and a photoresist composition containing the photoresist polymer. CONSTITUTION: The photoresist polymer comprises photoresist monomer represented by formula 1. In the formula 1, R1 and R2 represent hydrogen; substituted or unsubstituted C1-C5 linear or branched alkyl; or halogen, R3 represents hydrogen or acid-liable protective group, Y and W individually represent hydrogen, halogen, NO2 or CN, and m and n individually represent integer of 0-4. Photoresist composition comprising the photoresist polymer are excellent in etching resistance, heat resistance and adhesion, and can be developed in aqueous solution of tetramethylammonium hydroxide(TMAH) as developer. Also, the photoresist composition has a low light-adsorption at wavelength of 193 nm, 157 nm and 13 nm, and can be used in lithography process using light source of far-UV region.</p> |
