Semiconductor device and method of fabricating the same

摘要

Provided is a semiconductor device and method of fabricating the same. The device includes a substrate including a first region and a second region, a first gate pattern on the first region, a second gate pattern on the second region, and an interlayer insulating layer enclosing the first and second gate patterns. The first gate pattern including a first gate insulating layer and a first gate electrode, the second gate pattern including a second gate insulating layer and a second gate electrode, the first gate insulating layer is thicker than the second gate insulating layer, and a top width of the second gate pattern is larger than a bottom width thereof.

主权项

1. A semiconductor device, comprising:
a substrate including a first region and a second region; a first trench and a second trench disposed on the first and second regions, respectively; a first gate pattern provided in the first trench, the first gate pattern including a first gate insulating layer and a first gate electrode; a second gate pattern provided in the second trench, the second gate pattern including a second gate insulating layer and a second gate electrode; and an interlayer insulating layer enclosing the first and second gate patterns, wherein the first gate insulating layer is thicker than the second gate insulating layer, wherein the second trench has a width increasing in a direction away from the substrate, and wherein a top entrance and a bottom surface of the first trench have substantially the same width.