| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to restrain leakage current due to the damage of a silicon substrate and losses of a junction region by selectively forming an amorphous silicon layer on the junction region. CONSTITUTION: Isolated gate electrodes(4) are formed on a silicon substrate(1). An oxide layer(7A) is formed on the gate electrodes, and an oxide spacer(7B) is formed at both sidewalls of the gate electrodes. A source/drain region(6) is formed in the silicon substrate. After cleaning the resultant structure, an amorphous silicon layer(8) is formed on the silicon substrate of the source/drain region(6). Then, an insulating layer is formed on the entire surface of the resultant structure.
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