| 摘要 |
PURPOSE: To provide a method of forming a silicon nitride film in which a step coating can be improved even when a semiconductor device is miniaturized with more steps in a pattern. CONSTITUTION: Wiring lines 12, 12a in parallel to each other are provided on the surface of an interlayer insulating film 11. Nitride film masks 13, 13a are formed on the respective wiring lines 12, 12a. A blanket nitride film 14 is formed on the whole surface of this wiring pattern having high undercoat steps. Here, the present invention is characterized in that the film is formed by thermal CVD in a highly reactant gas atmosphere, and the mean free path of active molecules 15 (reacting molecules) is made smaller than the space dimension of the interconnect pattern. Thus, the nitride film thickness on the upper surface and that on the side surface of the wiring pattern are made the same. This formation of the nitride silicon film is applied to manufacture a SAC, trench capacitor or the like. |
