发明名称 Manufacturing method of mask for electron beam proximity exposure and mask
摘要 A method for manufacturing a mask which is used in an electron beam proximity exposure apparatus comprising an electron beam source which emits a collimated electron beam, the mask having an aperture which is arranged on a path of the electron beam, and a stage which holds and moves an object, wherein the mask is arranged in proximity to a surface of the object and a pattern corresponding to the aperture of the mask is exposed on the surface of the object with the electron beam having passed through the aperture, the method comprises the steps of: dividing the mask into a plurality of partial areas, and forming a plurality of partial masks which have apertures with patterns identical with the plurality of partial areas, respectively; and manufacturing the mask by exposing the patterns of the plurality of partial masks on corresponding positions of a mask substrate in an electron beam proximity exposure method. Thus, the method of manufacturing the masks for the electron beam proximity exposure at reduced costs is accomplished.
申请公布号 US2002071994(A1) 申请公布日期 2002.06.13
申请号 US20000732931 申请日期 2000.12.11
申请人 SHIMAZU NOBUO;UTSUMI TAKAO 发明人 SHIMAZU NOBUO;UTSUMI TAKAO
分类号 G03F1/08;G03F1/16;G03F7/20;H01J37/317;H01L21/027;(IPC1-7):G03F9/00 主分类号 G03F1/08
代理机构 代理人
主权项
地址