发明名称 CHARGED PARTICLE BEAM EXPOSURE SYSTEM, ITS ADJUSTING METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a charged particle beam exposure system that can negate the influence of a floating magnetic field without using any large-sized device and, in addition, is excellent in screen factor. SOLUTION: In this charged particle beam exposure system, a search coil 8 which detects an external magnetic field and a correction coil 9 are provided under an illumination lens 5 as shown in the figure. The external magnetic field detected by means of the coil 8 is converted into electric signals by means of an external magnetic field detecting circuit 15 and given to an external magnetic field correcting circuit 16. The circuit 16 negates the detected external magnetic field by giving the current corresponding to the magnetic field to the correction coil 9. Similarly, another search coil 21 and correction coil 22 are provided under a second projection lens 13 as shown in the figure and, at the same time, another external magnetic field detecting circuit 28 and external magnetic field correcting circuit 29 are also provided. The coils 21 and 22 work equally to the coils 8 and 9 provided under the illumination lens 5.
申请公布号 JP2002170764(A) 申请公布日期 2002.06.14
申请号 JP20000368005 申请日期 2000.12.04
申请人 NIKON CORP 发明人 NAKASUJI MAMORU
分类号 G03F7/20;H01J37/07;H01J37/09;H01J37/24;H01J37/305;H01J37/317;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/20
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