发明名称 THIN FILM TRANSISTOR HAVING SELF-ALIGNED TRANSPARENT PIXEL ELECTRODE AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A pixel cell and a method for manufacturing the same are provided to simplify manufacturing processes by self-aligning a transparent pixel electrode to a thin film transistor. CONSTITUTION: A thin film transistor structure is formed on a substrate. A data metal(20) is formed to connect with the thin film transistor structure. A first transparent conductive layer(22) is patterned to connect with the data metal(20). A dielectric film(26) is then formed on the resultant structure. A via hole is formed to expose portions of the first transparent conductive layer(22) by selectively etching the dielectric film(26). A second transparent conductive layer(30) is deposited on the dielectric film(26) and in the via hole to connect with the first transparent conductive layer(22) by self-aligning. A pixel electrode is then formed by patterning the second transparent conductive layer(30).
申请公布号 KR20020044542(A) 申请公布日期 2002.06.15
申请号 KR20010073682 申请日期 2001.11.26
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION. 发明人 COLGAN EVAN G.;SCHLEUPEN KAI R.;TSUJIMURA TAKATOSHI
分类号 G02F1/1362;G02F1/1368;(IPC1-7):H01L29/786 主分类号 G02F1/1362
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