发明名称 |
THIN FILM TRANSISTOR HAVING SELF-ALIGNED TRANSPARENT PIXEL ELECTRODE AND MANUFACTURING METHOD THEREOF |
摘要 |
PURPOSE: A pixel cell and a method for manufacturing the same are provided to simplify manufacturing processes by self-aligning a transparent pixel electrode to a thin film transistor. CONSTITUTION: A thin film transistor structure is formed on a substrate. A data metal(20) is formed to connect with the thin film transistor structure. A first transparent conductive layer(22) is patterned to connect with the data metal(20). A dielectric film(26) is then formed on the resultant structure. A via hole is formed to expose portions of the first transparent conductive layer(22) by selectively etching the dielectric film(26). A second transparent conductive layer(30) is deposited on the dielectric film(26) and in the via hole to connect with the first transparent conductive layer(22) by self-aligning. A pixel electrode is then formed by patterning the second transparent conductive layer(30).
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申请公布号 |
KR20020044542(A) |
申请公布日期 |
2002.06.15 |
申请号 |
KR20010073682 |
申请日期 |
2001.11.26 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION. |
发明人 |
COLGAN EVAN G.;SCHLEUPEN KAI R.;TSUJIMURA TAKATOSHI |
分类号 |
G02F1/1362;G02F1/1368;(IPC1-7):H01L29/786 |
主分类号 |
G02F1/1362 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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