发明名称 Buried hetero-structure opto-electronic device
摘要 A method of manufacturing a semiconductor optical device comprising the steps of: providing a substrate having an active layer thereon; providing an aluminium-bearing layer, the aluminium bearing, layer being adjacent the active layer; and oxidising the aluminium-bearing layer substantially entirely.
申请公布号 US2002074600(A1) 申请公布日期 2002.06.20
申请号 US20010931647 申请日期 2001.08.16
申请人 WANG ZHI-JIE;CHUA SOO-JIN;ZHOU FAN;WANG WEI 发明人 WANG ZHI-JIE;CHUA SOO-JIN;ZHOU FAN;WANG WEI
分类号 H01S5/22;H01S5/227;(IPC1-7):H01L29/04 主分类号 H01S5/22
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