SILICON WAFER AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a silicon wafer which is most suitable as an integrated circuit of a semiconductor device having a controlled uniform boron concentration. SOLUTION: In the method for manufacturing a silicon wafer, the silicon wafer having boron doped therein is heat treated at a temperature of 1000 deg.C or more in an atmosphere of a mixture gas of hydrogen and diborane (B2H6) (1). It is desirable to set a mixture ratio of hydrogen in this atmosphere to diborane (B2H6) in a diborane (B2H6) mixture gas at 1% or more. In the silicon wafer obtained by the method (1) for manufacturing a silicon wafer, a difference in boron concentration between the outermost surface layer of the wafer and the central part thereof is set at 10% or less (2).