| 摘要 |
A method of forming dual damascene structure is disclosed. A pad oxide layer, a barrier layer and an organic dielectric layer are formed in sequence on a substrate with the conducting line and the organic dielectric layer is etched with a patterned photoresist as a mask to form trenches therein. Next, an anisotropic thickness oxide layer is formed on the substrate by the plasma enhanced chemical vapor deposition (PECVD). Then, the anisotropic thickness oxide layer, the barrier layer and the pad oxide layer are etched with a patterned photoresist as a mask to form vias therein until the conducting line is exposed. Finally, a metal layer is deposited on the substrate and fills the vias and the trenches to form the dual damascene structure.
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