METHOD FOR IMPROVING PHOTORESIST PATTERN WIDTH SLIMMING PHENOMENON USING PHOTORESIST COMPOSITION INCLUDING THERMAL ACID GENERATOR

摘要

PURPOSE: A method for improving a photoresist pattern width slimming phenomenon is provided to easily determine a critical dimension target, by using a photoresist composition including a thermal acid generator and by heating a pattern formed after a developing process. CONSTITUTION: The photoresist composition including the thermal acid generator is applied on an etch target layer to form a photoresist layer. An exposure process is performed on the photoresist layer. The resultant structure is developed to form the pattern, and then the pattern is heated. The photoresist composition includes chemically amplified photoresist resin, a light acid generator, the thermal acid generator and an organic solvent.