| 摘要 |
PURPOSE: A formation method of metal interconnections of semiconductor devices is provided to improve reliability, stability, property, and a through-put by forming a reaction preventing layer. CONSTITUTION: After forming a damascene pattern by selectively etching an interlayer dielectric(22) on a substrate(21) having a defined structure, a barrier metal(24) and a reaction preventing layer(200) are sequentially formed on the entire surface of the resultant structure. Then, a first metal layer is formed by firstly depositing a metal using a low temperature PVD(Physical Vapor Deposition) and a second metal layer(25b) is continuously formed by secondly depositing the same metal using a high temperature PVD at the temperature of 300-900 deg.C. At this time, the first metal layer is reflowed to completely bury the damascene pattern without a void because the reaction preventing layer(200) prevents precipitates having a big grain size between the barrier metal(24) and the first and second metal layers(25b).
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