SPIN-ON-GLASS COMPOSITION

摘要

PURPOSE: A spin-on-glass(SOG) composition is provided, which is used to prepare silicon oxide coating having the smoothness required at the semiconductor device of 256 M and forming no void. CONSTITUTION: The SOG composition comprises 10-30 wt% of perhydropolysilazane which has a structural formula represented by -(SiH2NH)n-(n is a natural number), a mean mass molecular weight of 4,000-8,000, and a distribution of molecular weight of 3.0-4.0; and 70-90 wt% of a solvent. Preferably the solvent is xylene or dibutyl ether. The SOG composition employs perhydropolysilazane with a mean mass molecular weight of 6,000-8,000, when it is used to fill up the trench. The SOG composition employs perhydropolysilazane with a mean mass molecular weight of 4,000-6,000, when it is used to smoothen the gate electrode. The SOG composition employs perhydropolysilazane with a mean mass molecular weight of 4,500-7,500, when it is used to smoothen the metal pattern.