METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To form a homogeneous silicide layer that less produces a defect such as a junction leak. SOLUTION: A method for manufacturing a semiconductor device includes a preheating step of heating the surface of a silicon layer during formation of a metal film, when the metal film is formed on the silicon layer and then the silicon layer is heated to make the metal film react with the silicon layer and to form the silicide layer on the silicon layer.