| 摘要 |
PROBLEM TO BE SOLVED: To enhance withstand voltage and to prevent the deterioration of dielectric strength due to ion milling, in gap insulating films formed on both surfaces of a magneto-resistive effect film. SOLUTION: At least one of an upper and a lower gap films is a composite film wherein an oxide or a nitride of a group IVa metal element, a group Va metal element on the periodic table or alloy consisting essentially of these elements is formed on SiO2 having high with stand voltage.
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