SILICON-ON-INSULATOR SUBSTRATE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A silicon-on-insulator(SOI) substrate is provided to simplify a fabricating process, by performing a heat treatment process after oxygen ions are implanted into a desired depth of a wafer while an active region and a field region are formed. CONSTITUTION: The active region(150) and the field region are formed on a silicon substrate. The first oxygen ion implantation region(142) of the first thickness is formed under the active region and in the first region having the first depth from the surface of the silicon substrate. The second oxygen ion implantation region(144) of the second thickness is formed under the field region and in the second region having the second depth from the surface of the silicon substrate.