NON-DESTRUCTIVELY READABLE FERROELECTRIC MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a non-destructively readable ferroelectric memory device by applying write-in voltage Vf only to a ferroelectric capacitor F. SOLUTION: This device is provided with a ferroelectric capacitor F connected to an MIS-FET in series, a power source of write-in connected to a connection point N between the ferroelectric capacitor F and the MIS-FET and the other connection point A of the ferroelectric capacitor F, and a power source for read-out connected to the MIS-FET and the ferroelectric capacitor F being in a series connection state. Write-in voltage Vf is applied to the ferroelectric capacitor F, a connection point between the ferroelectric capacitor F and the MIS-FET is made a off-state, and read-out voltage Vi is applied to the ferroelectric capacitor F and the MIS-FET.