| 摘要 |
PURPOSE: A semiconductor device and its manufacture method are to provide techniques of efficiently forming on the same ubstrate high speed transistors having SDE regions with a shallow and steep impurity profile, and elements having impurity diffusion regions having an impurity profile different from that of the high speed transistor. CONSTITUTION: A high speed transistor having the dummy gate electrode(206) is formed in the first element region(202), whereas a high voltage transistor having the gate electrode(207) is formed in the second element region(203). At this time, the silicide preventing films(206a,207a) prevent the polysilicon gates(206b,207b) from being silicidated.
|
